CARACTERISATION DES DEGRADATIONS DES IGBTS EN MILIEU INDUSTRIEL = CHARACTERIZATION OF IGBT DEGRADATIONS IN INDUSTRIAL ENVIRONMENTMaouad, Alain; Charles, Jean-Pierre.1999, 160 p.Thesis

BCTM proceedings 2004 (proceedings of the 2004 Bipolar/BiCMOS Circuits and Technology Meetings)Bipolar/BiCMOS Circuits and Technology Meetings. 2004, isbn 0-7803-8618-3, 1Vol, 322 p., isbn 0-7803-8618-3Conference Proceedings

On the output impedance of a BJT Wilson current sourceDUTTA, A. K.Microelectronics journal. 1998, Vol 29, Num 3, pp 67-70, issn 0959-8324Article

Method to extract MOSFET substrate resistance using DC data of base resistance in parasitic BJTJUNG, D; CHA, J.-Y; CHA, J.-Y et al.CHA, J.-Y; CHA, J.-Y et al.Electronics letters. 2009, Vol 45, Num 2, pp 97-98, issn 0013-5194, 2 p.Article

A new extraction technique for the series resistances of semiconductor devices based on the intrinsic properties of bias-dependent Y-parametersCUOCO, V; NEO, W. C. E; DE VREEDE, L. C. N et al.Bipolar/BiCMOS Circuits and Technology Meetings. 2004, pp 148-151, isbn 0-7803-8618-3, 1Vol, 4 p.Conference Paper

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A novel low-cost horizontal current bipolar transistor (HCBT) with the reduced parasiticsSULIGOJ, Tomislav; BILJANOVIC, Petar; SIN, Johnny K. O et al.Bipolar/BiCMOS Circuits and Technology Meetings. 2004, pp 36-39, isbn 0-7803-8618-3, 1Vol, 4 p.Conference Paper

I-V characteristics of the lambda bipolar transistorMANJU SARKAR; SATYAM, M; PRABHAKAR, A et al.Microelectronics journal. 1995, Vol 26, Num 7, pp 647-652, issn 0959-8324Article

Implementation of optimized vertical Bipolar transistor in CMOS process technologySINGH, Upinder; DEO BRAT SINGH; ROY, J. N et al.SPIE proceedings series. 2002, pp 721-724, isbn 0-8194-4500-2, 2VolConference Paper

Classes de fonctionnement à tres haut rendement de TBHs pour les radiocommunications entre mobiles = Very high yield HBT operating classes for mobile radiocommunicationMALLET, A; FRAYSSE, J. P; CAMPOVECCHIO, M et al.Journées nationales microondes. 1997, pp 408-409, 2VolConference Paper

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The optimization of relative current sensitivity of bipolar magnetotransistorKOZLOV, A. V; REVELEVA, M. A; TIKHONOV, R. D et al.SPIE proceedings series. 2004, pp 362-368, isbn 0-8194-5324-2, 7 p.Conference Paper

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Modeling of thermal resistance dependence on design parameters in silicon-on-glass bipolar transistorsTAMIGI, F; NENADOVIC, N; D'ALESSANDRO, V et al.International conference on microelectronics. 2004, isbn 0-7803-8166-1, 2Vol, vol 1, 257-260Conference Paper

Quadrupole thermal modeling of a pyramidal multilayer multiblockMARANZANA, Gaël; PERRY, Isabelle; MAILLET, Denis et al.International heat transfer conference. 2002, pp 51-56, isbn 2-84299-308-X, 6 p.Conference Paper

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Electro-thermal analysis of paralleled bipolar devicesD'AMORE, D; MAFFEZZONI, P.Microelectronics journal. 2000, Vol 31, Num 9-10, pp 753-758, issn 0959-8324Conference Paper

Two-dimensional modeling of on state voltage drop in IGBTNAPOLI, E; STROLLO, A. G. M; SPIRITO, P et al.International conference on microelectronic. 1997, pp 505-508, isbn 0-7803-3664-X, 2VolConference Paper

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Application of the Johnson criteria to graphene transistorsKELLY, M. J.Semiconductor science and technology. 2013, Vol 28, Num 12, issn 0268-1242, 122001.1-122001.2Article

Extraction of the base and emitter resistances in bipolar transistors using an accurate base resistance modelINGVARSON, Fredrik; LINDER, Martin; JEPPSON, Kjell O et al.2002 international conference on microelectronic test structures. 2002, pp 71-75, isbn 0-7803-7464-9, 5 p.Conference Paper

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